STMicroelectronics STW12NA50
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.| Part No. | STW12NA50 |
|---|---|
| Datasheet | STW12NA50 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M(●) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 500 500 ± 30 11.6 7.3 46.4 170 1.36 -65 to 150 150 Unit V V V A A A W W/o C o o C C (●) Pulse width limited by safe operating area December 1995 1/9 STW12NA50 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.73 30 0.1 300 o o C/...
