STMicroelectronics STW12NK90Z
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the S(3) AM15572V1_TAB well‑established PowerMESH.| Part No. | STW12NK90Z |
|---|---|
| Datasheet | STW12NK90Z Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
3 2 1 TO-247 Order code STW12NK90Z VDS 900 V RDS(on) max. 880 mΩ ID 11 A● 100% avalanche tested
● Extremely high dv/dt capability
● Gate charge minimized
● Zener-protected D(2, TAB) G(1)
APPLICATIONS
● Switching applicationsDESCRIPTION
In addition to a significant reduction in on‑resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STW12NK90Z Product summary Order code STW12NK90Z Marking W12NK90Z Package TO-247 Packing Tube DS3364 - Rev 7 - January 2026 For further information, contact your local STMicroelectronics sales office. STW12NK90Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD Gate-source human body model (R = 1.5 kΩ, C = 100 pF) dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1.
