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STW13NK80Z - N-CHANNEL Power MOSFET

General Description

strip-based PowerMESH™ layout.

tepushing on-resistance significantly down, special lecare is taken to ensure a very good dv/dt ocapability for the most demanding applications.

Key Features

  • Type STW13NK80Z VDSS 800V RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW13NK80Z N-channel 800V - 0.53Ω - 12A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STW13NK80Z VDSS 800V RDS(on) <0.65Ω ID pW 12A 230W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances t(s)■ Very good manufacturing repeatibility ucDescription rodThe SuperMESH™ series is obtained through an Pextreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to tepushing on-resistance significantly down, special lecare is taken to ensure a very good dv/dt ocapability for the most demanding applications. bsSuch series complements ST full range of high voltage MOSFETs including revolutionary - OMDmesh™ products.