STW13NM50N Overview
This product is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. 4 2.1 (curves) ............................
STW13NM50N Key Features
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
- Switching application
- STF13NM50N
- STP13NM50N
- STW13NM50N
- 3 Electrical characteristics
- 10 Packaging mechanical data
- 15 Revision history
- STF13NM50N
- STP13NM50N