STMicroelectronics STW13NM60N
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.| Part No. | STW13NM60N |
|---|---|
| Datasheet | STW13NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N VDSS (@Tjmax) 650 V RDS(on) max < 0.36 Ω ID 11 A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance TAB 3 2 1 TO-220FP 123 I²PAK TAB TAB 3 2 1 TO-220 3 2 1 IPAK 3 2 1 TO-247
APPLICATIONS
● Switching applicationsDESCRIPTION
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. Figure 1. Internal schematic diagram $ OR 4!" ' 3 3# Table 1. Device summary Order codes STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N Marking 13NM60N Packages TO-220FP I²PAK TO-220 IPAK TO-247 Packaging Tube Tube Tube Tube Tube November 2012 This is information on a product in full production. Doc ID 15420 Rev 5 1/21 21 Contents Contents STF/I/P/U/W13NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
