STMicroelectronics STW15N80K5
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.STW15N80K5 Specifications
- Package : TO-247
- Mount Type : Through Hole
- RDS(on) Max : 375mΩ
- Drain-Source Voltage : 800V
- Input Capacitance : 1.1nF
- Terminals : 3
- Max Power Dissipation : 190W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | STW15N80K5 |
|---|---|
| Datasheet | STW15N80K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 800V 14A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 2 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Order code STB15N80K5 STF15N80K5 STP15N80K5 STW15N80K5 VDS 800 V● Ultra-low gate charge
● Very low FoM (figure of merit)
● Zener-protected
● 100% avalanche tested RDS(on) max. 375 mΩ ID 14 A
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) AM01476v1_tab These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. Product status links STB15N80K5 STF15N80K5 STP15N80K5 STW15N80K5 DS9181 - Rev 4 - October 2025 For further information, contact your local STMicroelectronics sales office. STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(3) Peak diod...
