STMicroelectronics STW15NA50
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.DESCRIPTION
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s TO-218ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M(●) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o w w w Parameter t a .D S a e h INTERNAL SCHEMATIC DIAGRAM U 4 t e 3 2 1 .c m o 3 2 1 ISOWATT218 Value STH/STW15NA50 500 500 ± 30 14.6 9.2 58.4 190 1.52 -65 to 150 150 9.3 5.5 58.4 80 0.64 4000 STH15NA50FI Unit V V V A A A (●) Pulse width limited by safe operating area November 1996 w w w .D a t a Sh ee U 4 t W W/o C V o o m o .c C C 1/11 STH15NA50/FI - STW15NA50 THERMAL DATA TO...