STMicroelectronics STW15NB50
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.| Part No. | STW15NB50 |
|---|---|
| Datasheet | STW15NB50 Download |
| Manufacturer |  STMicroelectronics |
| Description | 500V N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVEABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS VDGR VGS ID ID IDM (●) Ptot dv/dt(1) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Tot al Dissipation at Tc = 25 oC Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature June 1998 3 2 1 TO-247 3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM Value STW15NB50 STH15NB50FI 500 500 ± 30 14.6 10.5 9.2 6.6 58.4 58.4 190 80 0.64 1.52 4 4000 -65 to 150 150 Uni t V V V A A A W W/oC V/ n...
