STMicroelectronics STW16N65M5
The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.| Part No. | STW16N65M5 |
|---|---|
| Datasheet | STW16N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type STF16N65M5 STI16N65M5 STP16N65M5 STU16N65M5 STW16N65M5 VDSS @ TJmax RDS(on) max 710 V < 0.279 Ω● Worldwide best RDS(on)
● Higher VDSS rating
● High dv/dt capability
● Excellent switching performance
● Easy to drive
● 100% avalanche tested ID 12 A TAB TAB 3 2 1 TO-220FP 123 I²PAK 3 2 1 TO-220 TAB IPAK 3 2 1 3 2 1 TO-247 Figure 1. Internal schematic diagram
APPLICATIONS
● Switching applications $ 4!"DESCRIPTION
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. ' 3 !- V Table 1. Device summary Order codes STF16N65M5 STI16N65M5 STP16N65M5 STU16N65M5 STW16N65M5 October 2011 Marking 16N65M5 Package TO-220FP I²PAK TO-220 IPAK TO-247 Doc ID 15210 Rev 4 Packaging Tube 1/20 20 Contents Contents STF/I/P/U/W16N65M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
