STMicroelectronics STW17N62K3
This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.FEATURES
Order codes VDSS STF17N62K3 STP17N62K3 STW17N62K3 620 V 620 V 620 V RDS(on) max. ID Pw < 0.34 Ω < 0.34 Ω < 0.34 Ω 15.5 A 40 W 15.5 A 190 W 15.5 A 190 W● 100% avalanche tested
● Extremely high dv/dt capability
● Gate charge minimized
● Very low intrinsic capacitance
● Improved diode reverse recovery characteristics
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
TO-247 3 2 1 3 2 1 TO-220 3 TO-220FP 2 1 Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Tabl