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STW17N62K3 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STF17N62K3 STP17N62K3, STW17N62K3 N-channel 620 V, 0.28 Ω, 15.

General Description

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.

TO-247 3 2 1 3 2 1 TO-220 3 TO-220FP 2 1 Figure 1.

Key Features

  • Order codes VDSS STF17N62K3 STP17N62K3 STW17N62K3 620 V 620 V 620 V RDS(on) max. ID Pw < 0.34 Ω < 0.34 Ω < 0.34 Ω 15.5 A 40 W 15.5 A 190 W 15.5 A 190 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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