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STF19NM50N, STP19NM50N, STW19NM50N
N-channel 500 V, 0.2 Ω typ., 14 A MDmesh™ II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
Datasheet - production data
3 2 1
TO-220FP
TAB
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
Features
Order codes VDS @ TJmax STF19NM50N STP19NM50N 550 V STW19NM50N
RDS(on) max 0.25 Ω
ID 14 A
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance
Applications
• Switching applications
' 7$% *
6
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
STW19NM50N Datasheet
