STMicroelectronics STW20N60M2-EP
This device is an N-channel Power MOSFET developed using MDmesh™ S(3) M2 enhanced performance (EP) technology.| Part No. | STW20N60M2-EP |
|---|---|
| Datasheet | STW20N60M2-EP Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. STW20N60M2-EP 600 V 0.278 Ω● Extremely low gate charge
● Excellent output capacitance (COSS) profile
● Very low turn-off switching losses
● 100% avalanche tested
● Zener-protected ID 13 A D(2) G(1)
APPLICATIONS
● Switching applications● Tailored for very high frequency converters (f > 150 kHz)
DESCRIPTION
Thanks to its strip layout and an AM01476v1_No_tab improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Product status link STW20N60M2-EP Product summary Order code STW20N60M2-EP Marking 20N60M2EP Package TO-247 Packing
