STW21NM60ND Description
6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0Y using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices.
STW21NM60ND Key Features
- Intrinsic fast-recovery body diode
- Worldwide best RDS(on)-area amongst the fast
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche