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STW21NM60ND

Manufacturer: STMicroelectronics

STW21NM60ND datasheet by STMicroelectronics.

STW21NM60ND datasheet preview

STW21NM60ND Datasheet Details

Part number STW21NM60ND
Datasheet STW21NM60ND_STMicroelectronics.pdf
File Size 768.87 KB
Manufacturer STMicroelectronics
Description N-channel MOSFET
STW21NM60ND page 2 STW21NM60ND page 3

STW21NM60ND Overview

6  These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0Y using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices.

STW21NM60ND Key Features

  • Intrinsic fast-recovery body diode
  • Worldwide best RDS(on)-area amongst the fast
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche

STW21NM60ND from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
INCHANGE Logo STW21NM60ND N-Channel MOSFET INCHANGE
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