STW28NM60ND Overview
These FDmesh™ II Power MOSFETs with 6 intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ $0Y technology. Utilizing a new strip-layout vertical structure, these revolutionary devices.
STW28NM60ND Key Features
- Intrinsic fast-recovery body diode
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche
