STW30NM60ND
STW30NM60ND is N-channel MOSFET manufactured by STMicroelectronics.
STx30NM60ND
N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
Features
Type
VDSS @TJ max
RDS(on) max
STB30NM60ND
)STI30NM60ND t(s STF30NM60ND c STP30NM60ND u STW30NM60ND
650 V
0.13 Ω
25 A 25 A 25 A(1) 25 A 25 A rod1. Limited only by maximum temperature allowed
P- The world’s best RDS(on) in TO-220 amongst tethe fast recovery diode devices le- 100% avalanche tested o- Low input capacitance and gate charge bs- Low gate input resistance O- Extremely high dv/dt and avalanche -capabilities ct(s)Application du- Switching applications
Pro Description te The FDmesh™ II series belongs to the second legeneration of MDmesh™ technology. This orevolutionary Power MOSFET associates a new svertical structure to the pany's strip layout band associates all advantages of reduced on Oresistance and fast switching with an intrinsic fast-
I2PAK
TO-247
3 2 1
D2PAK 1
TO-220
3 2 1
3 2
TO-220FP 1
Figure 1. Internal schematic diagram
$
'
3
!-V
It is therefore strongly remended for bridge recovery body diode. topologies, in particular ZVS phase-shift converters.
Table 1. Device summary
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