STW32NM50N Overview
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $ OR 4!" ' 3 !-V Table 1. Device summary This is information on a product in full production. Doc ID 023436 Rev 1 1/21 .st. 21 Contents STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
