STMicroelectronics STW35N65DM2
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STW35N65DM2 |
|---|---|
| Datasheet | STW35N65DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 32A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STW35N65DM2 650 V 110 mΩ 32 A● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Product status link STW35N65DM2 Product summary Order code STW35N65DM2 Marking 35N65DM2 Package TO-247 Packing Tube DS12247 - Rev 4 - October 2023 For further information contact your local STMicroelectronics sales office. STW35N65DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source voltage (static) VGS Gate-source voltage (AC, f > 1 Hz) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope di/dt(2) Peak diode recovery current slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature TJ Operating junction temperature 1.
