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STW48N60M2 - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

Features

  • Order code STW48N60M2 V DS @ TJmax. 650 V.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected RDS(on) max. 70 mΩ ID 42 A D(2, TAB).

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Datasheet Details

Part number STW48N60M2
Manufacturer STMicroelectronics
File Size 273.20 KB
Description N-CHANNEL POWER MOSFET
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STW48N60M2 Datasheet N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package 3 2 1 TO-247 Features Order code STW48N60M2 V DS @ TJmax. 650 V • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected RDS(on) max. 70 mΩ ID 42 A D(2, TAB) Applications • Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it S(3) AM01475V1 suitable for the most demanding high efficiency converters.
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