STW57N65M5
Overview
6 $0Y These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density.
- 063 Ω 42 A
- Worldwide best RDS(on)*area amongst the silicon based devices
- Higher VDSS rating, high dv/dt capability
- Excellent switching performance
- Easy to drive, 100% avalanche tested Figure
- Internal schematic diagram
