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STW60NM50N - N-CHANNEL MOSFET

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • 3 2 1 TO-247 Order code VDSS (@Tjmax) RDS(on) max ID STW60NM50N 550 V.

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STW60NM50N N-channel 500 V, 0.035 Ω, 68 A, MDmesh™ II Power MOSFET in a TO-247 package Datasheet - production data Features 3 2 1 TO-247 Order code VDSS (@Tjmax) RDS(on) max ID STW60NM50N 550 V <0.043 Ω 68 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Figure 1. Internal schematic diagram '  *  Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6  $0Y Order codes STW60NM50N Table 1.