STW80N06-10 Description
® STW80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW80N06-10 .. Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance Test...