STW80N06-10 datasheet by STMicroelectronics.
| Part number | STW80N06-10 |
|---|---|
| Datasheet | STW80N06-10_STMicroelectronics.pdf |
| File Size | 78.73 KB |
| Manufacturer | STMicroelectronics |
| Description | N-Channel Power MOSFET |
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® STW80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW80N06-10 .. Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance Test...
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