Datasheet Summary
N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-247 package
3 2 1 TO-247
Features
Order code
RDS(on) max.
1200 V
2.00 Ω
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
ID 6A
PTOT 130 W
D(2) Applications
- Switching applications
G(1)
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications S(3) AM01476v1_No_tab requiring superior power density...