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STWA20N95K5 Description

This device is an N-channel Power MOSFET developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.

STWA20N95K5 Key Features

  • Worldwide best FOM (figure of merit)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected