Datasheet4U Logo Datasheet4U.com

STWA20N95K5 - N-CHANNEL MOSFET

General Description

This device is an N-channel Power MOSFET developed using SuperMESH™ 5 technology.

This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure.

Key Features

  • 3 2 1 TO-247 long leads Figure 1. Internal schematic diagram D(2) G(1) Order codes VDSS RDS(on) max ID PW STWA20N95K5 950 V 0.330 Ω 17.5 A 250 W.
  • Worldwide best FOM (figure of merit).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STWA45N65M5 N-Channel MOSFET INCHANGE
STWA57N65M5 N-Channel MOSFET INCHANGE
STW-195 Retaining Ring Spec Sheet AmericanRing
STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ST Microelectronics
STW10NB60 N-CHANNEL Power MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STWA20N95DK5 N-channel Power MOSFET
STWA12N120K5 N-channel 1200V 12A Power MOSFET
STWA30N65DM6AG Automotive-grade N-channel Power MOSFET
STWA32N65DM6AG Automotive-grade N-channel Power MOSFET
STWA38N65DM6AG N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STWA20N95K5 N-channel 950 V, 0.275 Ω, 17.5 A SuperMESH™ 5 Power MOSFET in TO-247 long leads package Datasheet - preliminary data Features 3 2 1 TO-247 long leads Figure 1. Internal schematic diagram D(2) G(1) Order codes VDSS RDS(on) max ID PW STWA20N95K5 950 V 0.330 Ω 17.5 A 250 W • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure.