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STWA3N170 - N-CHANNEL POWER MOSFET

Download the STWA3N170 datasheet PDF. This datasheet also covers the STW3N170 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process.

The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

Key Features

  • Order code STW3N170 STWA3N170 VDS 1700 V RDS(on) max. 13 Ω ID 2.6 A PTOT 160 W.
  • Intrinsic capacitances and Qg minimized.
  • High speed switching.
  • 100% avalanche tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STW3N170-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STW3N170, STWA3N170 N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code STW3N170 STWA3N170 VDS 1700 V RDS(on) max. 13 Ω ID 2.6 A PTOT 160 W  Intrinsic capacitances and Qg minimized  High speed switching  100% avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.