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STWA48N60M2 - N-Channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

  • Order code STWA48N60M2 VDS @ TJmax 650 V RDS(on) max 0.07 Ω ID 42 A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STWA48N60M2

Datasheet Details

Part number STWA48N60M2
Manufacturer STMicroelectronics
File Size 580.05 KB
Description N-Channel Power MOSFET
Datasheet download datasheet STWA48N60M2 Datasheet
Additional preview pages of the STWA48N60M2 datasheet.

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Full PDF Text Transcription

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STWA48N60M2 N-channel 600 V, 0.06 Ω typ., 42 A MDmesh™ M2 Power MOSFET in a TO-247 long leads package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STWA48N60M2 VDS @ TJmax 650 V RDS(on) max 0.07 Ω ID 42 A  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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