STMicroelectronics STWA60N028T
This N-channel Power MOSFET is based on the most innovative STMESH trench T technology, suitable for medium to high-voltage MOSFETs. It features outstanding low on-resistance and reduced gate charge values, thus minimizing conduction losses.| Part No. | STWA60N028T |
|---|---|
| Datasheet | STWA60N028T Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 600V 84A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TO-247 long leads D(2, TAB) Order code VDS RDS(on) max. STWA60N028T 600 V 28 mΩ● Very low FOM (RDS(on)●Qg)
● Excellent stability and uniformity
● Low gate charge, input capacitance and resistance
● Exellent switching performance
● 100% avalanche tested Application ID 84 A G(1) S(3)
● Microinverter
● Power supplies and converters
DESCRIPTION
AM01475v1_noZen The product delivers excellent switching performance and robust avalanche capability. The T series is designed for high power density applications, ensuring the highest efficiency standards. Product status link STWA60N028T Product summary Order code STWA60N028T Marking 60N028T Package Packing TO‑247 long leads Tube DS14884 - Rev 1 - January 2025 For further information, contact your local STMicroelectronics sales office. STWA60N028T Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC =...
