STMicroelectronics STWA60N035M9
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.| Part No. | STWA60N035M9 |
|---|---|
| Datasheet | STWA60N035M9 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 600V 62A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS STWA60N035M9 600 V● Very low FOM (RDS(on)●Qg)
● Higher dv/dt capability
● Excellent switching performance
● Easy to drive
● 100% avalanche tested Application RDS(on) max. 35 mΩ ID 62 A G(1) S(3)
● AC-DC converters
● DC-DC converters
● Microinverter AM01475v1_noZen
DESCRIPTION
The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency. Product status link STWA60N035M9 Product summary Order code STWA60N035M9 Marking 60N035M9 Package Packing TO‑247 long leads Tube DS14876 - Rev 1 - January 2025 For further information, contact your local STMicroelectronics sales office. STWA60N035M9 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (con...
