STMicroelectronics STWA63N65DM2
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STWA63N65DM2 |
|---|---|
| Datasheet | STWA63N65DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 60A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STWA63N65DM2 650 V 50 mΩ 60 A● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected PTOT 446 W
APPLICATIONS
● Switching applicationsDESCRIPTION
AM01476v1_tab Product status link STWA63N65DM2 Product summary Order code STWA63N65DM2 Marking 63N65DM2 Package TO-247 long leads Packing Tube DS12555 - Rev 2 - October 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area.
