STMicroelectronics STWA65N65DM2AG
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STWA65N65DM2AG |
|---|---|
| Datasheet | STWA65N65DM2AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade N-channel 650V 60A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STWA65N65DM2AG VDS 650 V RDS(on) max. 50 mΩ ID 60 A TO-247 long leads D(2, TAB) G(1) S(3)● AEC-Q101 qualified
● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
AM01476v1_tab● Switching applications
DESCRIPTION
Product status link STWA65N65DM2AG Product summary Order code STWA65N65DM2AG Marking 65N65DM2 Package TO-247 long leads Packing Tube DS12757 - Rev 4 - March 2025 For further information, contact your local STMicroelectronics sales office. STWA65N65DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) PTOT Drain current (pulsed) Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(2) Peak diode recovery current slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
