STMicroelectronics STWA68N65DM6AG
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.FEATURES
Order code STWA68N65DM6AG VDS 650 V RDS(on) max. 39 mΩ ID 72 A TO-247 long leads D(2, TAB) G(1) S(3)● AEC-Q101 qualified
● Fast-recovery body diode
● Lower RDS(on) per area vs previous generation
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
AM01476v1_tab● Switching applications
DESCRIPTION
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STWA68N65DM6AG Product summary Order code STWA68N65DM6AG Marking 68N65DM6AG Package TO-247 long leads Packing Tube DS13422 - Rev 2 - March 2025 For further information, contact your local STMicroelectronics sales office. STWA68N65DM6AG Electrical ratings 1 Electrical ratings Table 1.