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STWA68N65DM6AG Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STWA68N65DM6AG Datasheet Automotive-grade N-channel 650 V, 33 mΩ typ.

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General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Product status link STWA68N65DM6AG Product summary Order code STWA68N65DM6AG Marking 68N65DM6AG Package TO-247 long leads Packing Tube DS13422 - Rev 1 - July 2020 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code STWA68N65DM6AG VDS 650 V RDS(on) max. 39 mΩ ID 72 A D(2, TAB) G(1).
  • AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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