STMicroelectronics STWA70N65DM6
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.FEATURES
TO-247 long leads D(2, TAB) G(1) S(3) Order code VDS RDS(on) max. ID STWA70N65DM6 650 V 40 mΩ 68 A● Fast-recovery body diode
● Lower RDS(on) per area vs previous generation
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
● Switching applications AM01476v1_tabDESCRIPTION
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STWA70N65DM6 Product summary Order code STWA70N65DM6 Marking 70N65DM6 Package TO-247 long leads Packing Tube DS12313 - Rev 6 - November 2024 For further information contact your local STMicroelectronics sales office. STWA70N65DM6 Electrical ratings 1 Electrical ratings Table 1.