STMicroelectronics STWA72N60DM2AG
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STWA72N60DM2AG |
|---|---|
| Datasheet | STWA72N60DM2AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade N-channel 600V 66A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STWA72N60DM2AG VDS 600 V RDS(on) max. 42 mΩ ID 66 A TO-247 long leads D(2, TAB) G(1) S(3)● AEC-Q101 qualified
● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
AM01476v1_tab● Switching applications
DESCRIPTION
Product status link STWA72N60DM2AG Product summary Order code STWA72N60DM2AG Marking 72N60DM2 Package TO-247 long leads Packing Tube DS12726 - Rev 2 - March 2025 For further information, contact your local STMicroelectronics sales office. STWA72N60DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total dissipation at Tcase = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
