STMicroelectronics STX690A
The device is manufactured in low voltage NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.FEATURES
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● Very low collector to emitter saturation voltage DC current gain, hFE > 100 3 A continuous collector current 40 V breakdown voltage V(BR)CER
APPLICATIONS
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● Power management in portable equipment Voltage regulation in bias supply circuits Switching regulator in battery charger applications Heavy load driver TO-92 TO-92AP Figure 1. Internal schematic diagram
DESCRIPTION
Table 1. Device summary Marking X690A X690A Package TO-92 TO-92 AP Packaging Bulk Ammopack Order code STX690A STX690A-AP February 2009 Rev 1 1/10 10 Electrical ratings STX690A 1 Electrical ratings Table 2. Symbol VCBO VCER VCEO VEBO IC ICM Ptot Tstg TJ Absolute maximum ratings Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (R BE = 47 Ω) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tamb = 25 °C Storage temperature Max. operating junction temperature Value 40 40 30 5 3 6 0.9 -65 to 150 150 Unit V V V V A A W °C °C Table 3.