APPLICATIONS
: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. TO-92 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage o (I C = 0, I B = 0.5 A, t p < 10 µ s, T j < 150 C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T C = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 V (BR)EBO 1 3 0.5 1.5 1.5 -65 to 150 150 Unit V V V A A A A W o C o C October 2002 1/7 STX83003 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-A...
STMicroelectronics
