STMicroelectronics STY112N65M5
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.| Part No. | STY112N65M5 |
|---|---|
| Datasheet | STY112N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS at TJ max. STY112N65M5 710 V● Extremely low RDS(on)
● Low gate charge and input capacitance
● Excellent switching performance
● 100% avalanche tested
APPLICATIONS
● Switching applications RDS(on) max. 22 mΩ ID 96 A G(1) S(3)DESCRIPTION
AM01475v1_noZen Product status link STY112N65M5 Product summary Order code STY112N65M5 Marking 112N65M5 Package Max247 Packing Tube DS6035 - Rev 4 - July 2022 For further information contact your local STMicroelectronics sales office. STY112N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR Avalanche current, repetitive or not repetitive (pulse width limited by TJ max.) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1.
