STY112N65M5 Datasheet | STMicroelectronics

N-channel 650 V, 19 mΩ typ., 96 A MDmesh M5 Power MOSFET in a Max247 package Max247 3 2 1 D(2, TAB) Features Order code VDS at TJ max. 710 V - Extremely low RDS(on) - Low gate charge and input capacitance - Excellent switching performance - 100% avalanche tested Applications - Switching applications RDS(on) max. 22 mΩ ID 96 A G(1) S(3) Description This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology bined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and...