STMicroelectronics STY30NA50
The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages.| Part No. | STY30NA50 |
|---|---|
| Datasheet | STY30NA50 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
T he Max247 package is a new high volume power package exibiting the same footprint as the industry standard T O-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO -264. INTERNAL SCHEMATIC DIAGRAMAPPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS)ABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM (● ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor T stg Tj St orage Temperature Max. Operating Junction Temperature o o o Value 500 500 ± 30 30 19 120 300 2.4 -55 to 150 150 Uni t V V V A A A W W/ o C o o C C (●) Pulse width limited by safe operating area March 1996 1/4 STY30NA50 THERMAL DATA...
