STMicroelectronics STY50N105DK5
This very high voltage N-channel Power MOSFET is part of the MDmesh DK5 fastrecovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on) * area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters.| Part No. | STY50N105DK5 |
|---|---|
| Datasheet | STY50N105DK5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STY50N105DK5 1050 V 120 mΩ 46 A● Fast-recovery body diode
● Best RDS(on) x area
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness PTOT 625 W D(2, TAB)
APPLICATIONS
● Switching applications G(1) S(3)DESCRIPTION
AM01475v1_noZen Product status link STY50N105DK5 Product summary Order code STY50N105DK5 Marking 50N105DK5 Package Max247 Packing Tube DS9462 - Rev 3 - August 2021 For further information contact your local STMicroelectronics sales office. STY50N105DK5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness TJ Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area.
