T810-400B Datasheet | STMicroelectronics

FEATURES ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10m A and 35m A .. HIGH MUTATION TECHNOLOGY HIGH ITSM CAPABILITY A2 DESCRIPTION The T810-xxx B and T835-xxx B series are using high performance TOPGLASS PNPN technology. These devices are intented for AC control applications, using surface mount technology where high mutating and surge performances are required (like power tools, Solid State Relay). A2 A1 DPAK (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I t value for fusing Critical rate of rise of on-state current IG = 50m A di G/dt = 0.1A/µs Value Tc =110 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive 8 85 80 32 20 100 - 40 to + 150 - 40 to + 125 260 Unit A A A2s A/µs I t d I/dt Tstg Tj T Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10 s °C °C °C Symbol Parameter T810-/T835400B 600B 600 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C May 1998 Ed : 1A 1/5 T810-xxx B / T835-xxx B THERMAL RESISTANCES Symbol Rth (j-c) Rth (j-c) Rth (j-a) Junction to case for DC Junction to case for AC 360° conduction angle ( F= 50 Hz) Junction to ambient (S = 0.5 cm2) Parameter Value 2.1 1.6 70 Unit °C/W °C/W °C/W GATE CHARACTERISTICS (maximum values) .. PG(AV) = 1 W PGM= 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol Test Conditions Tj=25°C Tj=25°C Tj=125°C Tj=25°C Tj=25°C Tj=25°C Tj=25°C Tj=125°C Tj=125°C Quadrant T810 IGT VGT VGD IL IH - VTM - IDRM IRRM d V/dt - VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ IG=1.2 IGT IT= 100m A gate open ITM= 11A tp= 380µs VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM gate open I-II-III I-II-III I-II-III I-II-III MAX MAX MIN MAX MAX MAX MAX MAX MIN 50 25 15 1.5 10 2 500 10 1.3 0.2 60 35 Suffix T835 35 m A V V m A m A V µA m A V/µs...