FEATURES
Symbol Value IT(RMS) 8 VDRM/VRRM 600 and 800 IGT 20 to 30 Unit A V mA A2 G A1 DESCRIPTION
Based on ST’ Snubberless technology providing high commutation performances, They comply with UL standards (ref. E81734). G A2 A1 ISOWATT220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (Full sine wave) Tc= 100°C 8 A ITSM Non repetitive surge peak on-state F = 50Hz t = 20ms 100 A current (Full cycle, Tj initial = 25°C ) F = 60Hz t = 16.7ms 105 I2t I2t Value for fusing tp = 10 ms 55 A2s dI/dt VDSM/VRSM Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100ns Non repetitive surge peak off-state voltage F = 120 Hz Tj = 125°C 50 A/µs tp = 10ms Tj = 25°C VDRM/VRRM V + 100 IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 20µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 °C - 40 to + 125 March 2004 - Ed: 2 1/5 T820W / T830W ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified) Symbol Test Conditions Quadrant T820 IGT(1) VD=12V RL=33Ω I-II-III MAX.
STMicroelectronics
