T835-400B Datasheet | STMicroelectronics

FEATURES ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10m A and 35m A .H.co IGm H MUTATION TECHNOLOGY HIGH ITSM CAPABILITY HIGH PERFORMANCE TRIACS A2 DESCRIPTION The T810-xxx B and T835-xxx B series are using high performance TOPGLASS PNPN technology. These devices are intented for AC control applications, using surface mount technology where high mutating and surge performances are required (like power tools, Solid State Relay). A2 G A1 DPAK (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I2t d I/dt Tstg Tj T Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2t value for fusing Critical rate of rise of on-state current IG = 50m A di G/dt = 0.1A/µs Tc =110 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10 s Value 8 85 80 32 20 - 40 to + 150 - 40 to + 125 Unit A A2s A/µs °C °C °C Symbol Parameter VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C T810-/T835- 400B...