FEATURES
HIGH COMMUTATION PREFORMANCES SNUBBERLESSTM TECHNOLOGY HIGH NOISE IMMUNITY (dV/dt) HIGH ITSM DESCRIPTION
These devices are perfectly suited where high commutation and surge performances are required. A2 A2 G A1 D2PAK ABSOLUTE RATINGS (limiting values) Symbol VDRM VRRM IT(RMS) ITSM I2t dI/dt Tstg Tj T Parameter Repetitive peak off-state voltage Tj = 125°C RMS on-state current (360° conduction angle) Tc= 110°C Non repetitive surge peak on-state current (Tj initial = 25°C) I2t Value for fusing tp = 8.3ms tp = 10 ms tp = 10 ms Critical rate of rise of on-state current IG = 500 mA dIG /dt = 1 A/µs. Repetitive F = 50 Hz Non Repetitive Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10s Value 600 Unit V 8A 85 A 80 32 A2s 20 A/µs 100 - 40, + 150 - 40, + 125 260 °C °C May 1998 - Ed: 3A 1/5 T835-600G / T850-600G THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Rth(j-c) Parameter Junction to ambient (S = 1 cm2) Junction to case for DC J...
STMicroelectronics
