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TD350E - Advanced IGBT/MOSFET

General Description

The TD350E device is an advanced gate driver for IGBTs and power MOSFETs.

Control and protection functions are included and allow the design of high reliability systems.

Key Features

  • 1.5 A source/2.3 A sink (typ. ) gate drive.
  • Active Miller clamp feature.
  • Two-level turn-off with adjustable level and delay.
  • Desaturation detection.
  • Fault status output.
  • Negative gate drive capability.
  • Input compatible with pulse transformer or optocoupler.
  • Separate sink and source outputs for easy gate driving.
  • UVLO protection.
  • 2 kV ESD protection (HBM).

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TD350E Advanced IGBT/MOSFET driver Datasheet - production data Applications  1200 V, 3-phase inverters  Motor control  UPS systems Features  1.5 A source/2.3 A sink (typ.) gate drive  Active Miller clamp feature  Two-level turn-off with adjustable level and delay  Desaturation detection  Fault status output  Negative gate drive capability  Input compatible with pulse transformer or optocoupler  Separate sink and source outputs for easy gate driving  UVLO protection  2 kV ESD protection (HBM) Description The TD350E device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems.