TD350E
TD350E is Advanced IGBT/MOSFET manufactured by STMicroelectronics.
Features
- 1.5 A source/2.3 A sink (typ.) gate drive
- Active Miller clamp feature
- Two-level turn-off with adjustable level and delay
- Desaturation detection
- Fault status output
- Negative gate drive capability
- Input patible with pulse transformer or optocoupler
- Separate sink and source outputs for easy gate driving
- UVLO protection
- 2 k V ESD protection (HBM)
Description
The TD350E device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems.
The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allows the use of a simple bootstrap supply for the high side driver.
The device includes a two-level turn-off feature with adjustable level and delay. This function protects against excessive overvoltage at turn-off in case of overcurrent or short-circuit conditions. The same delay set in the two-level turn-off feature is applied at turn-on to prevent pulse width distortion.
The device also includes IGBT desaturation protection and a FAULT status output, and is patible with both pulse transformer and optocoupler signals.
Order code TD350E
TD350ETR
Table 1. Device summary
Temperature range
Package
-40, +125 °C
SO-14
Packaging Tube
Tape and reel
June 2013
This is information on a product in full production.
Doc ID018539 Rev 3
1/18
.st.
Contents
Contents
1 Block diagram
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2 Pin connections
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