STMicroelectronics THBT200S1
The THBT200S device is particularly suitable to protect ring generator relay against transient overvoltages.| Part No. | THBT200S1 |
|---|---|
| Datasheet | THBT200S1 Download |
| Manufacturer |  STMicroelectronics |
| Description | TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION |
| Buy | Stock & Price |
FEATURES
DUAL BIDIRECTIONAL CROWBAR PROTECTION. PEAK PULSE CURRENT : - IPP = 35 A, 10/1000 µs. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE = 200 V min. BREAKOVER VOLTAGE = 290 V max. MONOLITHIC DEVICE.DESCRIPTION
This monolithic protection device has been especially designed to protect subscriber line cards. SIP3 COMPLIESWITHTHE FOLLOWINGSTANDARDS: CCITT K20 : VDE 0433 : VDE 0878 : FCC part 68 : BELLCORE TR-NWT-001089 : 10/700 µs 5/310 µs 10/700 µs 5/310 µs 1.2/50 µs 1/20 µs 2/10 µs 2/20µs 2/10 µs 2/10µs 10/1000µs 10/1000µs 1kV 25A 2kV 45A (*) 1.5kV 40A 2.5kV 80A (*) 2.5kV 80A 1kV 35A (*) SCHEMATIC DIAGRAM N C 1 T ip 2 G N D 3 (*) with series resistors or PTC. R in g 4 TM: ASD is trademarks of SGS-THOMSON Microelectronics. February 1998 Ed: 2 1/7 THBT200S1ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C) Symbol IPP Parameter Peak pulse current (see note 1) 10/1000 µs 8/20 µs 2/10 µs tp = 20ms Value 35 70 80 20 - 40 to + 150 + 150 230 Unit A ITSM Tstg Tj TL Non repetitive surge peak on-state...
