STMicroelectronics THD200FI
The THD200FI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors.| Part No. | THD200FI |
|---|---|
| Datasheet | THD200FI Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: s HORIZONTAL DEFLECTION FOR MONITORSDESCRIPTION
ISOWATT218 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1500 700 10 10 20 5 10 57 -65 to 150 150 Uni t V V V A A A A W o o C C 1/7 December 1999 THD200FI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.2 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 Tj = 125 o C Min. Typ . Max. 0.2 2 100 Un it mA mA µA V V CEO(sus )∗ Collector-Emitter Sustaining...
