STMicroelectronics THD219HI
The THD219HI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance end uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors.| Part No. | THD219HI |
|---|---|
| Datasheet | THD219HI Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: s HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORSDESCRIPTION
3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VCBO VCEO V EBO IC ICM IB IBM Ptot Tstg Tj Parameter Collect or-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitt er-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 oC St orage Temperature Max. Operating Junction Temperature August 1996 Value 1500 700 10 8 15 5 8 54 -65 to 150 150 Uni t V V V A A A A W oC oC 1/6 THD219HI THERMAL DATA Rthj-ca se Thermal Resistance Junction-case Max 2.3 oC/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol P a ram et er Test Conditions ICES Collect or Cut-off Current (VBE = 0) VCE = 1500 V VCE = 1500 V Tj = 125 oC IEBO VCEO(sus) Emitter Cut-off Current (IC = 0) Co lle ct or- Em it t er Sustaining Voltage VEB = 5 V IC = 100 mA VEBO VCE(sat )∗ Emitter-Base Voltage (IC...
