STMicroelectronics THD277HI
This device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series are designed for use in horizontal deflection circuits in televisions and monitors.| Part No. | THD277HI |
|---|---|
| Datasheet | THD277HI Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
s HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS s SWITCH MODE POWER SUPPLIESDESCRIPTION
3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1500 700 10 8 15 5 8 50 -65 to 150 150 Uni t V V V A A A A W o o C C December 1999 1/5 THD277HI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.5 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO V EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Voltage Test Cond ition s V CE = 1500 V V EB = 5 V I E = 10 mA I C = 100 mA 10 700 Min. Typ . Max. 200 50 U...
