STMicroelectronics TIP120
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.| Part No. | TIP120 |
|---|---|
| Datasheet | TIP120 Download |
| Manufacturer |  STMicroelectronics |
| Description | Low voltage complementary power Darlington transistor |
| Buy | Stock & Price |
FEATURES
● Low collector-emitter saturation voltage TAB● Complementary NPN - PNP transistors TO-220 1 23 Application
● General purpose linear and switching C (2, TAB) C (2, TAB) B (1) B (1) R1 R2 R1 R2 SC07840 E (3) SC07850 E (3) NPN: R1 = 7 kΩ, R2 = 70 Ω PNP: R1 = 16 kΩ, R2 = 60 Ω
DESCRIPTION
Product status links TIP120 TIP121 TIP122 TIP125 TIP127 DS0854 - Rev 5 - May 2021 For further information contact your local STMicroelectronics sales office. 1 Note: TIP120, TIP121, TIP122, TIP125, TIP127 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM IB PTOT Tstg TJ Collector-base voltage (IE = 0 A) Collector-emitter voltage (IB = 0 A) Collector-base voltage (IC = 0 A) Collector current Collector peak current Base current Total power dissipation at TC ≤ 25°C Total power dissipation at TA ≤ 25°C Storage temperature range Maximum operating junction temperature Value NPN TIP120 TIP121 TIP122 Unit PNP TIP125 TIP127 60 80 100 V 60 80 100 V 5 V 5 A 8 A 0.12 A 65 W 2 -65 to 150 °C 150 °C For PNP types voltage and current values are negative.
