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TIP122FP - Transistor

General Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Figure 1.

Key Features

  • Low collector-emitter saturation voltage.
  • Complementary NPN - PNP transistors.
  • TO-220FP isolated package UL compliant.

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Other Datasheets by STMicroelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIP122FP TIP127FP Complementary power Darlington transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors ■ TO-220FP isolated package UL compliant Application ■ General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 3 2 1 TO-220FP Figure 1. Internal schematic diagrams NPN: R1 = 7 kΩ R2 = 70 Ω PNP: R1 = 16 kΩ R2 = 60 Ω Table 1. Device summary Order codes Marking TIP122FP TIP122FP TIP127FP TIP127FP Polarity NPN PNP Package TO-220FP December 2009 Doc ID 5309 Rev 5 Packaging Tube 1/11 www.st.