STMicroelectronics TIP127FP
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.| Part No. | TIP127FP |
|---|---|
| Datasheet | TIP127FP Download |
| Manufacturer |  STMicroelectronics |
| Description | Complementary power Darlington transistors |
| Buy | Stock & Price |
FEATURES
● Low collector-emitter saturation voltage● Complementary NPN - PNP transistors
● TO-220FP isolated package UL compliant Application
● General purpose linear and switching
DESCRIPTION
3 2 1 TO-220FP Figure 1. Internal schematic diagrams NPN: R1 = 7 kΩ R2 = 70 Ω PNP: R1 = 16 kΩ R2 = 60 Ω Table 1. Device summary Order codes Marking TIP122FP TIP122FP TIP127FP TIP127FP Polarity NPN PNP Package TO-220FP December 2009 Doc ID 5309 Rev 5 Packaging Tube 1/11 11 Electrical ratings 1 Electrical ratings Note: Table 2. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM IB PTOT TSTG TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total dissipation at Tc ≤ 25 °C Tamb ≤ 25 °C Storage temperature Max. operating junction temperature For PNP types voltage and current values are negative. Table 3. Thermal data Symbol Parameter RthJC RthJA Thermal resistance junction-case max. Thermal resistance junction-ambient max.
