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TIP35CP - Complementary power transistors

General Description

The devices are manufactured in planar technology with “base island” layout.

The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

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Key Features

  • Low collector-emitter saturation voltage.
  • Complementary NPN-PNP transistors.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIP35CP TIP36CP Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN-PNP transistors Applications ■ General purpose ■ Audio amplifier Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. . 3 2 1 TO-3P Figure 1. Internal schematic diagrams Table 1. Device summary Order code TIP35CP TIP36CP Marking TIP35CP TIP36CP Package TO-3P September 2008 Rev 2 Packaging Tube 1/9 www.st.com 9 Electrical ratings 1 Electrical ratings Table 2.